Thin film transistors based on zinc nitride as a channel layer for optoelectronic devices

Keyphrases

• Zinc Nitride 100%
• Channel Layer 100%
• Bottom Gate 100%
• Thin-film Transistors 100%
• Transistor 50%
• Photolithography Process 50%
• Active Layer 50%
• Nitrided Layer 50%
• Visible Light 50%
• Transmission Measurement 50%
• Visible-infrared 50%
• Optoelectronic Applications 50%
• Output Characteristics 50%
• Radio Frequency Magnetron Sputtering 50%
• Threshold Voltage 50%
• Absorption Edge 50%
• Top-gate Thin-film Transistors 50%
• Transistor Characteristics 50%
• Zinc Nitride Films 50%
• Saturation Region 50%
• Enhanced Output 50%
• Post-growth Annealing 50%

Material Science

• Nitride Compound 100%
• Thin-Film Transistor 100%
• Transistor 66%
• Film 33%
• Annealing 33%
• Magnetron Sputtering 33%