Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn3N2 sputtered films

Carlos García Núñez, Juan Jiménez-Trillo, Miguel García Vélez, Juan Piqueras, Jose Luis Pau, Carmen Coya, Angel Luis Álvarez

Research output: Contribution to journalArticle

Abstract

This work analyzes the morphological, compositional and electrical modification of zinc nitride (Zn3N2) films through arc discharges produced by biasing a metal tip at a micrometric distance of the surface. Polycrystalline nitride layers are prepared by radio-frequency magnetron sputtering from a pure Zn target on glass substrates using N2 as working gas. Film properties after arc discharges are investigated by using scanning electron microscopy (SEM), ion beam analysis (IBA) techniques and four-probe resistivity measurements. Electrical discharge lithography performed at low bias voltages reveals as an effective mechanism to reduce resistivity by electrical breakdown of the thin oxide layer formed on top of the nitride. At higher voltages, electrical discharges along the scan increase nitride resistivity due to the severe modification of the structural properties. Additionally, compositional analysis reveals that nitrogen leaves the structure being replaced by ambient oxygen. This characteristic behavior leads to the formation of facetted submicron ZnO crystals whose size depends on the original Zn3N2 grain size and the probe voltage used. The excess of zinc forms self-assembled microstructures along the scan edge.
Original languageEnglish
Pages (from-to)783-788
Number of pages6
JournalApplied Surface Science
Volume285
Issue numberPart B
DOIs
Publication statusPublished - 15 Nov 2013
Externally publishedYes

Fingerprint

Nitrides
Lithography
Electric potential
Zinc
Bias voltage
Discharge (fluid mechanics)
Magnetron sputtering
Oxides
Ion beams
Structural properties
Nitrogen
Gases
Metals
Oxygen
Glass
Crystals
Microstructure
Scanning electron microscopy
Substrates

Keywords

  • zinc nitride
  • zinc oxide
  • magnetron sputtering
  • microfabrication
  • arc discharge lithography

Cite this

García Núñez, C., Jiménez-Trillo, J., García Vélez, M., Piqueras, J., Pau, J. L., Coya, C., & Álvarez, A. L. (2013). Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn3N2 sputtered films. Applied Surface Science, 285(Part B), 783-788. https://doi.org/10.1016/j.apsusc.2013.08.129
García Núñez, Carlos ; Jiménez-Trillo, Juan ; García Vélez, Miguel ; Piqueras, Juan ; Pau, Jose Luis ; Coya, Carmen ; Álvarez, Angel Luis. / Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn3N2 sputtered films. In: Applied Surface Science. 2013 ; Vol. 285, No. Part B. pp. 783-788.
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García Núñez, C, Jiménez-Trillo, J, García Vélez, M, Piqueras, J, Pau, JL, Coya, C & Álvarez, AL 2013, 'Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn3N2 sputtered films', Applied Surface Science, vol. 285, no. Part B, pp. 783-788. https://doi.org/10.1016/j.apsusc.2013.08.129

Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn3N2 sputtered films. / García Núñez, Carlos; Jiménez-Trillo, Juan; García Vélez, Miguel; Piqueras, Juan; Pau, Jose Luis; Coya, Carmen; Álvarez, Angel Luis.

In: Applied Surface Science, Vol. 285, No. Part B, 15.11.2013, p. 783-788.

Research output: Contribution to journalArticle

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T1 - Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn3N2 sputtered films

AU - García Núñez, Carlos

AU - Jiménez-Trillo, Juan

AU - García Vélez, Miguel

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AU - Pau, Jose Luis

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AU - Álvarez, Angel Luis

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N2 - This work analyzes the morphological, compositional and electrical modification of zinc nitride (Zn3N2) films through arc discharges produced by biasing a metal tip at a micrometric distance of the surface. Polycrystalline nitride layers are prepared by radio-frequency magnetron sputtering from a pure Zn target on glass substrates using N2 as working gas. Film properties after arc discharges are investigated by using scanning electron microscopy (SEM), ion beam analysis (IBA) techniques and four-probe resistivity measurements. Electrical discharge lithography performed at low bias voltages reveals as an effective mechanism to reduce resistivity by electrical breakdown of the thin oxide layer formed on top of the nitride. At higher voltages, electrical discharges along the scan increase nitride resistivity due to the severe modification of the structural properties. Additionally, compositional analysis reveals that nitrogen leaves the structure being replaced by ambient oxygen. This characteristic behavior leads to the formation of facetted submicron ZnO crystals whose size depends on the original Zn3N2 grain size and the probe voltage used. The excess of zinc forms self-assembled microstructures along the scan edge.

AB - This work analyzes the morphological, compositional and electrical modification of zinc nitride (Zn3N2) films through arc discharges produced by biasing a metal tip at a micrometric distance of the surface. Polycrystalline nitride layers are prepared by radio-frequency magnetron sputtering from a pure Zn target on glass substrates using N2 as working gas. Film properties after arc discharges are investigated by using scanning electron microscopy (SEM), ion beam analysis (IBA) techniques and four-probe resistivity measurements. Electrical discharge lithography performed at low bias voltages reveals as an effective mechanism to reduce resistivity by electrical breakdown of the thin oxide layer formed on top of the nitride. At higher voltages, electrical discharges along the scan increase nitride resistivity due to the severe modification of the structural properties. Additionally, compositional analysis reveals that nitrogen leaves the structure being replaced by ambient oxygen. This characteristic behavior leads to the formation of facetted submicron ZnO crystals whose size depends on the original Zn3N2 grain size and the probe voltage used. The excess of zinc forms self-assembled microstructures along the scan edge.

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