TY - JOUR
T1 - Study of triboelectric potential for tunable contact-electrification field effect transistors
AU - Mckinlay, Michael
AU - Baghini, Mahdieh Shojaei
AU - Pelayo Garcia, Manuel
AU - Yalagala, Bhavani
AU - Heidari, Hadi
AU - Gibson, Des
AU - Garcia Nuñez, Carlos
PY - 2024/8/13
Y1 - 2024/8/13
N2 - Tribotronics is an original field studying the coupling between triboelectricity and semiconductors. Contactelectrification field effect transistors (CE-FET) have emerged as promising tribotronic devices capable of implementing novel electromechanical devices for human/robot interfacing, sensing platforms and active, flexible electronics in the near future. This work presents the design, fabrication, and characterisation CE-FETs consisting of a triboelectric nanogenerator (TENG) – using zinc oxide (ZnO) and polyethylene terephthalate (PET) as tribo-positive and tribonegative materials, respectively, coupled to a driven metal oxide semiconductor field effect transistor (MOSFET). Optimising the triboelectric properties of selected materials, and operating TENG with frequencies ranging between 210 Hz, and electrode distances ranging from 2-10 mm, the modulation of the output characteristics of the MOSFET via external mechanical forces has been demonstrated.
AB - Tribotronics is an original field studying the coupling between triboelectricity and semiconductors. Contactelectrification field effect transistors (CE-FET) have emerged as promising tribotronic devices capable of implementing novel electromechanical devices for human/robot interfacing, sensing platforms and active, flexible electronics in the near future. This work presents the design, fabrication, and characterisation CE-FETs consisting of a triboelectric nanogenerator (TENG) – using zinc oxide (ZnO) and polyethylene terephthalate (PET) as tribo-positive and tribonegative materials, respectively, coupled to a driven metal oxide semiconductor field effect transistor (MOSFET). Optimising the triboelectric properties of selected materials, and operating TENG with frequencies ranging between 210 Hz, and electrode distances ranging from 2-10 mm, the modulation of the output characteristics of the MOSFET via external mechanical forces has been demonstrated.
U2 - 10.1109/LSENS.2024.3442311
DO - 10.1109/LSENS.2024.3442311
M3 - Article
SN - 2475-1472
VL - 8
SP - 1
EP - 4
JO - IEEE Sensors Letters
JF - IEEE Sensors Letters
IS - 9
ER -