Growth and characterization of tin doped GaAs(100) layers using chemical beam epitaxy are described in this work. The resistivity, type of carriers, as well as their net concentrations and mobilities were obtained by Hall Effect measurements. Layers with electron concentrations between 7.0$1016 and 1.6$1019 cm3 were obtained, while the measured room temperature mobilities were in the range 860-2700 cm2/Vs. Photoluminescence spectra show the presence of a donor related transition, whose intensity increases with the sample doping. Acceptor related transitions, different than the residual carbon doping, were not observed, suggesting that Sn incorporates as a donor with a small compensation ratio.
|Title of host publication||Proceedings of the 8th Spanish Conference on Electron Devices|
|Subtitle of host publication||CDE'2011|
|Number of pages||3|
|Publication status||Published - 7 Apr 2011|
|Name||IEEE Conference Series|
- epitaxial growth