Sn Doped GaAs by CBE using Tetramethyltin

Carlos García Núñez, D. Ghita, B.J. Garcia

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Growth and characterization of tin doped GaAs(100) layers using chemical beam epitaxy are described in this work. The resistivity, type of carriers, as well as their net concentrations and mobilities were obtained by Hall Effect measurements. Layers with electron concentrations between 7.0$1016 and 1.6$1019 cm3 were obtained, while the measured room temperature mobilities were in the range 860-2700 cm2/Vs. Photoluminescence spectra show the presence of a donor related transition, whose intensity increases with the sample doping. Acceptor related transitions, different than the residual carbon doping, were not observed, suggesting that Sn incorporates as a donor with a small compensation ratio.
Original languageEnglish
Title of host publicationProceedings of the 8th Spanish Conference on Electron Devices
Subtitle of host publicationCDE'2011
PublisherIEEE
Number of pages3
ISBN (Electronic)978-1-4244-7865-1
ISBN (Print)978-14244-7863-7
DOIs
Publication statusPublished - 7 Apr 2011
Externally publishedYes

Publication series

NameIEEE Conference Series
PublisherIEEE
ISSN (Print)2163-4971

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Keywords

  • component
  • epitaxial growth
  • semiconductor
  • doping

Cite this

Núñez, C. G., Ghita, D., & Garcia, B. J. (2011). Sn Doped GaAs by CBE using Tetramethyltin. In Proceedings of the 8th Spanish Conference on Electron Devices: CDE'2011 (IEEE Conference Series). IEEE. https://doi.org/10.1109/SCED.2011.5744204