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Single GaAs nanowire based photodetector fabricated by dielectrophoresis
Carlos García Núñez
*
, Alejandro F. Braña de Cal
, Nair Lopez
, Jose Luis Pau
, Basilio J. García
*
Corresponding author for this work
School of Computing, Engineering and Physical Sciences
Research output
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Contribution to journal
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Article
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peer-review
14
Citations (Scopus)
89
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Keyphrases
Dielectrophoresis
100%
GaAs Nanowires
100%
Photodetector
100%
Nanowires
50%
Conductive Electrode
50%
Dielectrophoretic
50%
Dimensionality Reduction
25%
Order of Magnitude
25%
Electronic Devices
25%
Contactless
25%
Assembly Process
25%
Nanostructures
25%
Structure-property Relationships
25%
Visible Light
25%
Al-doped ZnO
25%
Diode
25%
Low Resistance
25%
Electrical Characteristics
25%
Current-voltage Characteristics
25%
Electronic Properties
25%
Rectifying Characteristic
25%
Assembly Yield
25%
Fast Fabrication
25%
Schottky Barrier
25%
Non-uniform Electric Field
25%
Series Resistance
25%
Forward Bias
25%
Nanowire Structure
25%
Mechanical Manipulation
25%
Nanowire Electrodes
25%
Nanowire Electronics
25%
Electrode Layout
25%
Mechanical Method
25%
Strong Sensitivity
25%
Bias Conditions
25%
Mechanical Damage
25%
Nanowire Manipulation
25%
Material Science
Nanowire
100%
Gallium Arsenide
100%
ZnO
12%
Contact Resistance
12%
Electrical Property
12%
Current Voltage Characteristics
12%
Electronic Property
12%
Schottky Barrier
12%
Nanostructure
12%