Resonant electromechanical device fabrication with new thin film materials

J. McPhillips, T.B. Adams, N.J. Donnelly, Didier Cornez, Steffen Lapp, A. Abrar, J.M. Gregg, R.M. Bowman, Graeme McRobbie, Katherine Kirk, Sandy Cochran

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin film piezoelectric materials have many applications, including in high frequency bulk acoustic wave resonators. However, conventional thin film materials such as AlN have quite poor piezoelectric properties. Research involving bulk piezoelectric material has now produced widely available single crystals such as (1-x)Pb(Mg1/3,Nb2/3)O3-x(PbTiO3) (PMN-PT) which offer much higher performance, and thin films of such materials are also viable. In this paper, work on sputtered AlN and pulsed laser deposited PMN-PT thin films is described, including measurements of Ag/AlN/Al trilayers on several different substrates and Au/PMNPT/La0.5Sr0.5CoO3 trilayers on single crystal MgO. Analysis via the spacing of parallel resonant frequencies in electrical impedance and Sparameter measurements has also been explored. This technique takes into account that the films are not self-supported and that their properties are dependent on the substrate. Using various software tools most often applied to bulk materials, with appropriate material parameters, further exploration of the suitability of PMN-PT for thin film device fabrication and direct comparison with AlN have been considered.
Original languageEnglish
Title of host publication2005 IEEE Ultrasonics Symposium, Vols 1-4
PublisherIEEE
Pages1812-1815
ISBN (Print)0-7803-9382-1
DOIs
Publication statusPublished - Sep 2005

Publication series

NameULTRASONICS SYMPOSIUM
PublisherIEEE
ISSN (Print)1051-0117

Cite this

McPhillips, J., Adams, T. B., Donnelly, N. J., Cornez, D., Lapp, S., Abrar, A., ... Cochran, S. (2005). Resonant electromechanical device fabrication with new thin film materials. In 2005 IEEE Ultrasonics Symposium, Vols 1-4 (pp. 1812-1815). (ULTRASONICS SYMPOSIUM). IEEE. https://doi.org/10.1109/ULTSYM.2005.1603220
McPhillips, J. ; Adams, T.B. ; Donnelly, N.J. ; Cornez, Didier ; Lapp, Steffen ; Abrar, A. ; Gregg, J.M. ; Bowman, R.M. ; McRobbie, Graeme ; Kirk, Katherine ; Cochran, Sandy. / Resonant electromechanical device fabrication with new thin film materials. 2005 IEEE Ultrasonics Symposium, Vols 1-4. IEEE, 2005. pp. 1812-1815 (ULTRASONICS SYMPOSIUM).
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title = "Resonant electromechanical device fabrication with new thin film materials",
abstract = "Thin film piezoelectric materials have many applications, including in high frequency bulk acoustic wave resonators. However, conventional thin film materials such as AlN have quite poor piezoelectric properties. Research involving bulk piezoelectric material has now produced widely available single crystals such as (1-x)Pb(Mg1/3,Nb2/3)O3-x(PbTiO3) (PMN-PT) which offer much higher performance, and thin films of such materials are also viable. In this paper, work on sputtered AlN and pulsed laser deposited PMN-PT thin films is described, including measurements of Ag/AlN/Al trilayers on several different substrates and Au/PMNPT/La0.5Sr0.5CoO3 trilayers on single crystal MgO. Analysis via the spacing of parallel resonant frequencies in electrical impedance and Sparameter measurements has also been explored. This technique takes into account that the films are not self-supported and that their properties are dependent on the substrate. Using various software tools most often applied to bulk materials, with appropriate material parameters, further exploration of the suitability of PMN-PT for thin film device fabrication and direct comparison with AlN have been considered.",
author = "J. McPhillips and T.B. Adams and N.J. Donnelly and Didier Cornez and Steffen Lapp and A. Abrar and J.M. Gregg and R.M. Bowman and Graeme McRobbie and Katherine Kirk and Sandy Cochran",
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McPhillips, J, Adams, TB, Donnelly, NJ, Cornez, D, Lapp, S, Abrar, A, Gregg, JM, Bowman, RM, McRobbie, G, Kirk, K & Cochran, S 2005, Resonant electromechanical device fabrication with new thin film materials. in 2005 IEEE Ultrasonics Symposium, Vols 1-4. ULTRASONICS SYMPOSIUM, IEEE, pp. 1812-1815. https://doi.org/10.1109/ULTSYM.2005.1603220

Resonant electromechanical device fabrication with new thin film materials. / McPhillips, J.; Adams, T.B.; Donnelly, N.J.; Cornez, Didier; Lapp, Steffen; Abrar, A.; Gregg, J.M.; Bowman, R.M.; McRobbie, Graeme; Kirk, Katherine; Cochran, Sandy.

2005 IEEE Ultrasonics Symposium, Vols 1-4. IEEE, 2005. p. 1812-1815 (ULTRASONICS SYMPOSIUM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Abrar, A.

AU - Gregg, J.M.

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N2 - Thin film piezoelectric materials have many applications, including in high frequency bulk acoustic wave resonators. However, conventional thin film materials such as AlN have quite poor piezoelectric properties. Research involving bulk piezoelectric material has now produced widely available single crystals such as (1-x)Pb(Mg1/3,Nb2/3)O3-x(PbTiO3) (PMN-PT) which offer much higher performance, and thin films of such materials are also viable. In this paper, work on sputtered AlN and pulsed laser deposited PMN-PT thin films is described, including measurements of Ag/AlN/Al trilayers on several different substrates and Au/PMNPT/La0.5Sr0.5CoO3 trilayers on single crystal MgO. Analysis via the spacing of parallel resonant frequencies in electrical impedance and Sparameter measurements has also been explored. This technique takes into account that the films are not self-supported and that their properties are dependent on the substrate. Using various software tools most often applied to bulk materials, with appropriate material parameters, further exploration of the suitability of PMN-PT for thin film device fabrication and direct comparison with AlN have been considered.

AB - Thin film piezoelectric materials have many applications, including in high frequency bulk acoustic wave resonators. However, conventional thin film materials such as AlN have quite poor piezoelectric properties. Research involving bulk piezoelectric material has now produced widely available single crystals such as (1-x)Pb(Mg1/3,Nb2/3)O3-x(PbTiO3) (PMN-PT) which offer much higher performance, and thin films of such materials are also viable. In this paper, work on sputtered AlN and pulsed laser deposited PMN-PT thin films is described, including measurements of Ag/AlN/Al trilayers on several different substrates and Au/PMNPT/La0.5Sr0.5CoO3 trilayers on single crystal MgO. Analysis via the spacing of parallel resonant frequencies in electrical impedance and Sparameter measurements has also been explored. This technique takes into account that the films are not self-supported and that their properties are dependent on the substrate. Using various software tools most often applied to bulk materials, with appropriate material parameters, further exploration of the suitability of PMN-PT for thin film device fabrication and direct comparison with AlN have been considered.

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SN - 0-7803-9382-1

T3 - ULTRASONICS SYMPOSIUM

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EP - 1815

BT - 2005 IEEE Ultrasonics Symposium, Vols 1-4

PB - IEEE

ER -

McPhillips J, Adams TB, Donnelly NJ, Cornez D, Lapp S, Abrar A et al. Resonant electromechanical device fabrication with new thin film materials. In 2005 IEEE Ultrasonics Symposium, Vols 1-4. IEEE. 2005. p. 1812-1815. (ULTRASONICS SYMPOSIUM). https://doi.org/10.1109/ULTSYM.2005.1603220