Reactive ion etching of Nb thin films for Nb/AlAlOx/Nb Josephson tunnel junctions

Keyphrases

• Reactive Ion Etching 100%
• Etching Rate 100%
• Nb Thin Films 100%
• Josephson Tunnel Junctions 100%
• Total Pressure 66%
• Scanning Electron Microscopy (SEM-EDS) 66%
• Regression Analysis 33%
• Response Surface Methodology 33%
• Trilayer 33%
• Magnetron Sputtering 33%
• Anisotropy 33%
• Silicon Wafer 33%
• Electron Microscopy Observations 33%
• Gas Composition 33%
• Gas Mixture 33%
• Discharge Power 33%
• Face-centred 33%
• Total Discharge 33%
• Etching Process 33%
• Etch Profile 33%
• Expression Response 33%
• Niobium Thin Film 33%
• Polynomial Expression 33%
• Input Power 33%
• Photoresist Mask 33%
• Response Surface 33%
• Second-order Polynomial 33%

Engineering

• Thin Films 100%
• Etch Rate 100%
• Process Parameter 66%
• Design of Experiments 33%
• Response Surface Methodology 33%
• Magnetron 33%
• Photoresist 33%
• Gas Composition 33%
• Main Process 33%
• Silicon Wafer 33%
• Polynomial Order 33%
• Input Power 33%
• Response Surface 33%
• Gas Mixture 33%
• Experimental Design 33%
• Anisotropy 33%

Material Science

• Thin Films 100%
• Scanning Electron Microscopy 100%
• Reactive Ion Etching 100%
• Experimental Design 50%
• Magnetron Sputtering 50%
• Anisotropy 50%
• Niobium 50%
• Silicon Wafer 50%
• Gas Mixture 50%
• Regression Analysis 50%