Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy

C. García Núñez; A.F. Brana; J.L. Pau; D. Ghita; B.J. Garcia; G. Shen; D.S. Wilbert; S.M. Kim; Patrick Kung

doi:10.1016/j.jcrysgro.2013.03.025

Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy

C. García Núñez, A.F. Brana, J.L. Pau, D. Ghita, B.J. Garcia, G. Shen, D.S. Wilbert, S.M. Kim, Patrick Kung

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

GaAs nanowires (NWs) were grown by Ga-assisted chemical beam epitaxy on Si(111) substrates covered by a thin oxide layer using different substrate temperatures and growth times. Ga droplet terminated NWs with hexagonal footprint and cross section were observed by scanning electron microscopy, with diameters and lengths in the range of 40–65 nm and 0.3–1.2 µm, respectively. Transmission electron microscopy (TEM) images show evidences of vapor–liquid–solid growth mechanisms which lead to different droplet-nanowire interface quality depending on Ga-catalyst wetting area of NW sidewalls. TEM and Raman spectroscopy demonstrates the existence of a single zincblende phase in the NW body, without any evidence of wurtzite phase domains.

Original language	English
Pages (from-to)	205-212
Number of pages	8
Journal	Journal of Crystal Growth
Volume	372
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.03.025
Publication status	Published - 1 Jun 2013
Externally published	Yes

Keywords

GaAs
GaAs nanowires
III/V nanowires
chemical beam epitaxy
CBE
nanowire growth on silicon
TEM
Raman spectroscopy
VLS
Ga-assisted VLS

Access to Document

10.1016/j.jcrysgro.2013.03.025

Cite this

@article{485b1835bbf342eb89a8e083f5b6f98b,

title = "Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy",

abstract = "GaAs nanowires (NWs) were grown by Ga-assisted chemical beam epitaxy on Si(111) substrates covered by a thin oxide layer using different substrate temperatures and growth times. Ga droplet terminated NWs with hexagonal footprint and cross section were observed by scanning electron microscopy, with diameters and lengths in the range of 40–65 nm and 0.3–1.2 µm, respectively. Transmission electron microscopy (TEM) images show evidences of vapor–liquid–solid growth mechanisms which lead to different droplet-nanowire interface quality depending on Ga-catalyst wetting area of NW sidewalls. TEM and Raman spectroscopy demonstrates the existence of a single zincblende phase in the NW body, without any evidence of wurtzite phase domains.",

keywords = "GaAs, GaAs nanowires, III/V nanowires, chemical beam epitaxy, CBE, nanowire growth on silicon, TEM, Raman spectroscopy, VLS, Ga-assisted VLS",

author = "{Garc{\'i}a N{\'u}{\~n}ez}, C. and A.F. Brana and J.L. Pau and D. Ghita and B.J. Garcia and G. Shen and D.S. Wilbert and S.M. Kim and Patrick Kung",

note = "ORCID Reference type: [bibtex]; ORCID Reference: [@article{RID:0802150713883-1, title = {Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy}, journal = {Journal of Crystal Growth}, year = {2013}, author = {Garcia Nunez, C. and Brana, A.F. and Pau, J.L. and Ghita, D. and Garcia, B.J. and Shen, G. and Wilbert, D.S. and Kim, S.M. and Kung, P.}, volume = {372}, pages = {205-12} }]",

year = "2013",

month = jun,

day = "1",

doi = "10.1016/j.jcrysgro.2013.03.025",

language = "English",

volume = "372",

pages = "205--212",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy

AU - García Núñez, C.

AU - Brana, A.F.

AU - Pau, J.L.

AU - Ghita, D.

AU - Garcia, B.J.

AU - Shen, G.

AU - Wilbert, D.S.

AU - Kim, S.M.

AU - Kung, Patrick

N1 - ORCID Reference type: [bibtex]; ORCID Reference: [@article{RID:0802150713883-1, title = {Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy}, journal = {Journal of Crystal Growth}, year = {2013}, author = {Garcia Nunez, C. and Brana, A.F. and Pau, J.L. and Ghita, D. and Garcia, B.J. and Shen, G. and Wilbert, D.S. and Kim, S.M. and Kung, P.}, volume = {372}, pages = {205-12} }]

PY - 2013/6/1

Y1 - 2013/6/1

N2 - GaAs nanowires (NWs) were grown by Ga-assisted chemical beam epitaxy on Si(111) substrates covered by a thin oxide layer using different substrate temperatures and growth times. Ga droplet terminated NWs with hexagonal footprint and cross section were observed by scanning electron microscopy, with diameters and lengths in the range of 40–65 nm and 0.3–1.2 µm, respectively. Transmission electron microscopy (TEM) images show evidences of vapor–liquid–solid growth mechanisms which lead to different droplet-nanowire interface quality depending on Ga-catalyst wetting area of NW sidewalls. TEM and Raman spectroscopy demonstrates the existence of a single zincblende phase in the NW body, without any evidence of wurtzite phase domains.

AB - GaAs nanowires (NWs) were grown by Ga-assisted chemical beam epitaxy on Si(111) substrates covered by a thin oxide layer using different substrate temperatures and growth times. Ga droplet terminated NWs with hexagonal footprint and cross section were observed by scanning electron microscopy, with diameters and lengths in the range of 40–65 nm and 0.3–1.2 µm, respectively. Transmission electron microscopy (TEM) images show evidences of vapor–liquid–solid growth mechanisms which lead to different droplet-nanowire interface quality depending on Ga-catalyst wetting area of NW sidewalls. TEM and Raman spectroscopy demonstrates the existence of a single zincblende phase in the NW body, without any evidence of wurtzite phase domains.

KW - GaAs

KW - GaAs nanowires

KW - III/V nanowires

KW - chemical beam epitaxy

KW - CBE

KW - nanowire growth on silicon

KW - TEM

KW - Raman spectroscopy

KW - VLS

KW - Ga-assisted VLS

U2 - 10.1016/j.jcrysgro.2013.03.025

DO - 10.1016/j.jcrysgro.2013.03.025

M3 - Article

SN - 0022-0248

VL - 372

SP - 205

EP - 212

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy

Abstract

Keywords

Access to Document

Fingerprint

Cite this