Optical sensors based on metal oxide nanowires for UV/IR detection

Jose Luis Pau, Carlos García Núñez, Antonio García Marín, Eduardo Ruiz, Juan Piqueras

Research output: Contribution to journalConference article

Abstract

Metal oxide nanowires (NWs) present high stability and excellent optical, electrical and mechanical properties. Their synthesis is cost-effective since they can be produced by means of conventional ovens using vapor phase transport or direct metal oxidation. In this work, n-type ZnO and p-type CuO NWs are deposited on pre-patterned electrodes of Aldoped ZnO (AZO) by dielectrophoresis. Performance of devices fabricated from single and multiple NWs are compared. Highly selective UV detection is demonstrated in n-type ZnO NW photoconductors with high external gains in the 0.09-1$108 range and slow time responses, both effects induced by surface effects. In contrast, n-p-n AZO/ CuO NW/AZO heterostructures show lower gains but faster optical responses, mainly limited by device parasitics. Given the CuO bandgap (1.2 eV), the results are quite promising for the development of hybrid metal oxide detection structures in imaging and photovoltaic applications.
Original languageEnglish
Article number87740L
JournalSPIE Proceedings
Volume8774
DOIs
Publication statusPublished - 3 May 2013
Externally publishedYes

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optical measuring instruments
metal oxides
nanowires
photoconductors
time response
ovens
electrical properties
mechanical properties
vapor phases
costs
optical properties
oxidation
electrodes
synthesis
metals

Cite this

Pau, Jose Luis ; Núñez, Carlos García ; Marín, Antonio García ; Ruiz, Eduardo ; Piqueras, Juan. / Optical sensors based on metal oxide nanowires for UV/IR detection. In: SPIE Proceedings. 2013 ; Vol. 8774.
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title = "Optical sensors based on metal oxide nanowires for UV/IR detection",
abstract = "Metal oxide nanowires (NWs) present high stability and excellent optical, electrical and mechanical properties. Their synthesis is cost-effective since they can be produced by means of conventional ovens using vapor phase transport or direct metal oxidation. In this work, n-type ZnO and p-type CuO NWs are deposited on pre-patterned electrodes of Aldoped ZnO (AZO) by dielectrophoresis. Performance of devices fabricated from single and multiple NWs are compared. Highly selective UV detection is demonstrated in n-type ZnO NW photoconductors with high external gains in the 0.09-1$108 range and slow time responses, both effects induced by surface effects. In contrast, n-p-n AZO/ CuO NW/AZO heterostructures show lower gains but faster optical responses, mainly limited by device parasitics. Given the CuO bandgap (1.2 eV), the results are quite promising for the development of hybrid metal oxide detection structures in imaging and photovoltaic applications.",
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Optical sensors based on metal oxide nanowires for UV/IR detection. / Pau, Jose Luis; Núñez, Carlos García; Marín, Antonio García; Ruiz, Eduardo; Piqueras, Juan.

In: SPIE Proceedings, Vol. 8774, 87740L, 03.05.2013.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Optical sensors based on metal oxide nanowires for UV/IR detection

AU - Pau, Jose Luis

AU - Núñez, Carlos García

AU - Marín, Antonio García

AU - Ruiz, Eduardo

AU - Piqueras, Juan

PY - 2013/5/3

Y1 - 2013/5/3

N2 - Metal oxide nanowires (NWs) present high stability and excellent optical, electrical and mechanical properties. Their synthesis is cost-effective since they can be produced by means of conventional ovens using vapor phase transport or direct metal oxidation. In this work, n-type ZnO and p-type CuO NWs are deposited on pre-patterned electrodes of Aldoped ZnO (AZO) by dielectrophoresis. Performance of devices fabricated from single and multiple NWs are compared. Highly selective UV detection is demonstrated in n-type ZnO NW photoconductors with high external gains in the 0.09-1$108 range and slow time responses, both effects induced by surface effects. In contrast, n-p-n AZO/ CuO NW/AZO heterostructures show lower gains but faster optical responses, mainly limited by device parasitics. Given the CuO bandgap (1.2 eV), the results are quite promising for the development of hybrid metal oxide detection structures in imaging and photovoltaic applications.

AB - Metal oxide nanowires (NWs) present high stability and excellent optical, electrical and mechanical properties. Their synthesis is cost-effective since they can be produced by means of conventional ovens using vapor phase transport or direct metal oxidation. In this work, n-type ZnO and p-type CuO NWs are deposited on pre-patterned electrodes of Aldoped ZnO (AZO) by dielectrophoresis. Performance of devices fabricated from single and multiple NWs are compared. Highly selective UV detection is demonstrated in n-type ZnO NW photoconductors with high external gains in the 0.09-1$108 range and slow time responses, both effects induced by surface effects. In contrast, n-p-n AZO/ CuO NW/AZO heterostructures show lower gains but faster optical responses, mainly limited by device parasitics. Given the CuO bandgap (1.2 eV), the results are quite promising for the development of hybrid metal oxide detection structures in imaging and photovoltaic applications.

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SN - 0277-786X

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ER -