Abstract
The electric field distribution within a fabry-perot etalon is readily variable by changing the angle of incidence or the thickness of the etalon. The laser damage threshold (LDT) of Fabry-Perot etalons was measured as a function of electric field distribution, monitored through the transmittance. Two types of etalon were used - thin film Fabry-Perot devices with high finesse were investigated at 1.064μm, and a simple dielectric slab etalon (Germanium) was investigated at 10.6μm. In the latter case the results show a correlation between the LDT and the inverse square of the calculated peak electric field (1/E2) in the sample. For the thin film Fabry-Perot, the correlation is between the LDT and 1/E2 at the spacer boundaries. Subsequent sample analysis also suggests that damage was initiated at spacer boundaries. It is concluded that the laser damage properties of such etalons are in agreement with theoretical expectations, and that their damage behaviour can be described by a single parameter
| Original language | English |
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| Title of host publication | Laser Induced Damage in Optical Materials |
| Subtitle of host publication | 1989 |
| Place of Publication | West Conshohocken, PA |
| Publisher | National Institute of Standards and Technology |
| Pages | 471-483 |
| Number of pages | 13 |
| DOIs | |
| Publication status | Published - 1 Jan 1990 |
| Externally published | Yes |
| Event | Proceedings of the 21st Symposium on Optical Materials for High-Power Lasers - Boulder Damage Symposium - Boulder , United States Duration: 1 Nov 1989 → 3 Nov 1989 |
Conference
| Conference | Proceedings of the 21st Symposium on Optical Materials for High-Power Lasers - Boulder Damage Symposium |
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| Country/Territory | United States |
| City | Boulder |
| Period | 1/11/89 → 3/11/89 |