In-situ investigation of spontaneous and plasma-enhanced oxidation of AIN film surfaces

Shigeng Song, Frank Placido

Research output: Contribution to journalArticle

Abstract

The oxidation of sputtered AlN thin films on silicon substrates is investigated in-situ by high precision, single-wavelength optical monitoring of reflectance for low pressures of oxygen and room temperature conditions. Modelling of spontaneous surface oxidation and plasma enhanced oxidation shows that at the start of oxidation, the amount of available reactants dominates the reaction rate. The Mott potential for plasma enhanced oxidation is found to be much higher than that for spontaneous oxidation, providing explanation of why the oxygen plasma can enhance oxidation of AlN.
Original languageEnglish
JournalApplied Physics Letters
Volume99
Issue number12
DOIs
Publication statusPublished - 19 Sep 2011

Cite this

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title = "In-situ investigation of spontaneous and plasma-enhanced oxidation of AIN film surfaces",
abstract = "The oxidation of sputtered AlN thin films on silicon substrates is investigated in-situ by high precision, single-wavelength optical monitoring of reflectance for low pressures of oxygen and room temperature conditions. Modelling of spontaneous surface oxidation and plasma enhanced oxidation shows that at the start of oxidation, the amount of available reactants dominates the reaction rate. The Mott potential for plasma enhanced oxidation is found to be much higher than that for spontaneous oxidation, providing explanation of why the oxygen plasma can enhance oxidation of AlN.",
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doi = "10.1063/1.3640219",
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In-situ investigation of spontaneous and plasma-enhanced oxidation of AIN film surfaces. / Song, Shigeng; Placido, Frank.

In: Applied Physics Letters, Vol. 99, No. 12, 19.09.2011.

Research output: Contribution to journalArticle

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AU - Placido, Frank

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N2 - The oxidation of sputtered AlN thin films on silicon substrates is investigated in-situ by high precision, single-wavelength optical monitoring of reflectance for low pressures of oxygen and room temperature conditions. Modelling of spontaneous surface oxidation and plasma enhanced oxidation shows that at the start of oxidation, the amount of available reactants dominates the reaction rate. The Mott potential for plasma enhanced oxidation is found to be much higher than that for spontaneous oxidation, providing explanation of why the oxygen plasma can enhance oxidation of AlN.

AB - The oxidation of sputtered AlN thin films on silicon substrates is investigated in-situ by high precision, single-wavelength optical monitoring of reflectance for low pressures of oxygen and room temperature conditions. Modelling of spontaneous surface oxidation and plasma enhanced oxidation shows that at the start of oxidation, the amount of available reactants dominates the reaction rate. The Mott potential for plasma enhanced oxidation is found to be much higher than that for spontaneous oxidation, providing explanation of why the oxygen plasma can enhance oxidation of AlN.

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M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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