In-situ investigation of spontaneous and plasma-enhanced oxidation of AIN film surfaces

Shigeng Song; Frank Placido

doi:10.1063/1.3640219

In-situ investigation of spontaneous and plasma-enhanced oxidation of AIN film surfaces

Shigeng Song, Frank Placido

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The oxidation of sputtered AlN thin films on silicon substrates is investigated in-situ by high precision, single-wavelength optical monitoring of reflectance for low pressures of oxygen and room temperature conditions. Modelling of spontaneous surface oxidation and plasma enhanced oxidation shows that at the start of oxidation, the amount of available reactants dominates the reaction rate. The Mott potential for plasma enhanced oxidation is found to be much higher than that for spontaneous oxidation, providing explanation of why the oxygen plasma can enhance oxidation of AlN.

Original language	English
Journal	Applied Physics Letters
Volume	99
Issue number	12
DOIs	https://doi.org/10.1063/1.3640219
Publication status	Published - 19 Sept 2011

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title = "In-situ investigation of spontaneous and plasma-enhanced oxidation of AIN film surfaces",

abstract = "The oxidation of sputtered AlN thin films on silicon substrates is investigated in-situ by high precision, single-wavelength optical monitoring of reflectance for low pressures of oxygen and room temperature conditions. Modelling of spontaneous surface oxidation and plasma enhanced oxidation shows that at the start of oxidation, the amount of available reactants dominates the reaction rate. The Mott potential for plasma enhanced oxidation is found to be much higher than that for spontaneous oxidation, providing explanation of why the oxygen plasma can enhance oxidation of AlN.",

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AU - Placido, Frank

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N2 - The oxidation of sputtered AlN thin films on silicon substrates is investigated in-situ by high precision, single-wavelength optical monitoring of reflectance for low pressures of oxygen and room temperature conditions. Modelling of spontaneous surface oxidation and plasma enhanced oxidation shows that at the start of oxidation, the amount of available reactants dominates the reaction rate. The Mott potential for plasma enhanced oxidation is found to be much higher than that for spontaneous oxidation, providing explanation of why the oxygen plasma can enhance oxidation of AlN.

AB - The oxidation of sputtered AlN thin films on silicon substrates is investigated in-situ by high precision, single-wavelength optical monitoring of reflectance for low pressures of oxygen and room temperature conditions. Modelling of spontaneous surface oxidation and plasma enhanced oxidation shows that at the start of oxidation, the amount of available reactants dominates the reaction rate. The Mott potential for plasma enhanced oxidation is found to be much higher than that for spontaneous oxidation, providing explanation of why the oxygen plasma can enhance oxidation of AlN.

U2 - 10.1063/1.3640219

DO - 10.1063/1.3640219

M3 - Article

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

In-situ investigation of spontaneous and plasma-enhanced oxidation of AIN film surfaces

Abstract

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