Keyphrases
High Mobility
100%
Zinc Nitride
100%
Thin-film Transistors
100%
Electron Concentration
28%
Spectroscopic Ellipsometry
28%
Si (100) Substrate
28%
Transistor
14%
Fabrication Methods
14%
Cm(III)
14%
Glass Substrate
14%
Growth Rate
14%
Low Temperature Process
14%
Electrical Properties
14%
Nitrided Layer
14%
Liquid Crystal
14%
Deposition Parameters
14%
Growth Conditions
14%
Impurities
14%
Hall Effect Measurement
14%
High Conductivity
14%
Electron Mobility
14%
Output Characteristics
14%
Lift-off
14%
Optical Lithography
14%
Transmission Spectroscopy
14%
Capping Layer
14%
Radio Frequency Magnetron Sputtering
14%
Bottom Gate
14%
Techniques Spectroscopic
14%
Ion Beam Analysis Techniques
14%
Resistivity
14%
SiO2 Layer
14%
Four-probe
14%
Growth Temperature
14%
Channel Length
14%
Channel Width
14%
Visible Light Exposure
14%
Gate Oxide
14%
Sputtering Growth
14%
Low Mobility
14%
Active Matrix
14%
Liquid Organic
14%
Gate Electrode
14%
Top-gate Configuration
14%
Transistor Channel
14%
Van Der Pauw
14%
Organic Light-emitting Diode Display
14%
Hydrogenated Amorphous Silicon
14%
Poor Stability
14%
Engineering
Thin Films
100%
Thin-Film Transistor
100%
Electron Concentration
40%
Optical Lithography
20%
Low-Temperature
20%
Radio Frequency
20%
Nitride
20%
Nitride Layer
20%
Magnetron
20%
Deposition Parameter
20%
Growth Condition
20%
Sio2 Layer
20%
Growth Temperature
20%
Cap Layer
20%
Channel Length
20%
Drain Electrode
20%
Gate Electrode
20%
Hydrogenated Amorphous Silicon
20%
Organic Light-Emitting Diode
20%
Gate Oxide
20%
Glass Substrate
20%
Liquid Crystal
20%
Material Science
Thin Films
100%
Thin-Film Transistor
100%
Nitride Compound
40%
Oxidation Reaction
20%
Film
20%
Oxide Compound
20%
ZnO
20%
Magnetron Sputtering
20%
Lithography
20%
Electrical Resistivity
20%
Amorphous Silicon
20%
Transistor
20%
Light-Emitting Diode
20%
Liquid Crystal
20%
Chemical Engineering
Film
100%
Nitride
28%
Spectroscopic Ellipsometry
14%
Magnetron Sputtering
14%
Lithography
14%
Growth Temperature
14%