Abstract
Zn3N2 films were grown by rf-magnetron sputtering in Ar/N2 ambient using Zn target (99.995%) on glass substrates. Electrical properties such as resistivity, mobility, and carrier concentration were determined by Hall-effect measurements using the four-probe Van der
Pauw technique. Through the optimization of the growth conditions, a maximum mobility of 99 cm2 /Vs was achieved for an electron concentration of 3.2×1018 cm-3 at a 423-K growth temperature, 4.4-nm/min growth rate,
and 73%-rich N2 ambient. Resistivity varied from
1.2×10-3 to 5×10-2 Ω cm as a function of the growth conditions. TFTs were successfully fabricated using those layers as a channel. ID/VDS output characteristics were analyzed and resultant field effect mobility around 0.06 cm2/Vs was calculated.
Pauw technique. Through the optimization of the growth conditions, a maximum mobility of 99 cm2 /Vs was achieved for an electron concentration of 3.2×1018 cm-3 at a 423-K growth temperature, 4.4-nm/min growth rate,
and 73%-rich N2 ambient. Resistivity varied from
1.2×10-3 to 5×10-2 Ω cm as a function of the growth conditions. TFTs were successfully fabricated using those layers as a channel. ID/VDS output characteristics were analyzed and resultant field effect mobility around 0.06 cm2/Vs was calculated.
| Original language | English |
|---|---|
| Title of host publication | 35th Workshop on Compound Semiconductor Devices (WOCSDICE) |
| Subtitle of host publication | WOCSDICE 2011 - Catania (Italy), May 29th - June 1st 2011 |
| Editors | Vito Raineri, Fabrizio Roccaforte |
| Place of Publication | Catania, Italy |
| Publisher | Consiglio Nazionale delle Ricerche Istituto per la Microelettronica e Microsistemi |
| Pages | 205-206 |
| Number of pages | 2 |
| ISBN (Print) | 978-88-8080-123-8 |
| Publication status | Published - May 2011 |
| Externally published | Yes |