High mobility n-type Zn3N2 thin films as channel for thin film transistors

C. García Núñez, J.L. Pau, M.J. Hernández, M. Cervera, E. Ruíz, J. Piqueras

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Zn3N2 films were grown by rf-magnetron sputtering in Ar/N2 ambient using Zn target (99.995%) on glass substrates. Electrical properties such as resistivity, mobility, and carrier concentration were determined by Hall-effect measurements using the four-probe Van der
Pauw technique. Through the optimization of the growth conditions, a maximum mobility of 99 cm2 /Vs was achieved for an electron concentration of 3.2×1018 cm-3 at a 423-K growth temperature, 4.4-nm/min growth rate,
and 73%-rich N2 ambient. Resistivity varied from
1.2×10-3 to 5×10-2 Ω cm as a function of the growth conditions. TFTs were successfully fabricated using those layers as a channel. ID/VDS output characteristics were analyzed and resultant field effect mobility around 0.06 cm2/Vs was calculated.
Original languageEnglish
Title of host publication35th Workshop on Compound Semiconductor Devices (WOCSDICE)
Subtitle of host publicationWOCSDICE 2011 - Catania (Italy), May 29th - June 1st 2011
EditorsVito Raineri, Fabrizio Roccaforte
Place of PublicationCatania, Italy
PublisherConsiglio Nazionale delle Ricerche Istituto per la Microelettronica e Microsistemi
Number of pages2
ISBN (Print)978-88-8080-123-8
Publication statusPublished - May 2011
Externally publishedYes


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