High ion current density plasma source for ion-assisted deposition of optical thin films

Frank Placido; Des Gibson

doi:10.3788/COL201008S1.0049

High ion current density plasma source for ion-assisted deposition of optical thin films

Frank Placido^*, Des Gibson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A plasma source utilizing direct current (DC) voltage between an anode and a hot hollow cathode is employed to create high-density plasma. Plasma spatial distribution, ion energy, plasma neutralisation, and current densities are found to be separately tunable. Ion current densities >0.5 mA/cm² have been demonstrated over coating areas >1 m diameter. The primary advantage of plasma, as opposed to the ion source approach, is its ability to fill in the vacuum chamber and the couple with evaporant. This induces partial evaporant ionisation, providing uniform ion-assisted deposition over extended coating areas. Optical thin film properties deposited using the adapted high ion current plasma source are likewise described.

Original language	English
Pages (from-to)	49-52
Number of pages	4
Journal	Chinese Optics Letters
Volume	8
Issue number	SUPPL.
DOIs	https://doi.org/10.3788/COL201008S1.0049
Publication status	Published - 30 Apr 2010
Externally published	Yes

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@article{bb10261fd0bc41b788e7d382e17c0bf1,

title = "High ion current density plasma source for ion-assisted deposition of optical thin films",

abstract = "A plasma source utilizing direct current (DC) voltage between an anode and a hot hollow cathode is employed to create high-density plasma. Plasma spatial distribution, ion energy, plasma neutralisation, and current densities are found to be separately tunable. Ion current densities >0.5 mA/cm2 have been demonstrated over coating areas >1 m diameter. The primary advantage of plasma, as opposed to the ion source approach, is its ability to fill in the vacuum chamber and the couple with evaporant. This induces partial evaporant ionisation, providing uniform ion-assisted deposition over extended coating areas. Optical thin film properties deposited using the adapted high ion current plasma source are likewise described.",

author = "Frank Placido and Des Gibson",

year = "2010",

month = apr,

day = "30",

doi = "10.3788/COL201008S1.0049",

language = "English",

volume = "8",

pages = "49--52",

journal = "Chinese Optics Letters",

issn = "1671-7694",

publisher = "Optica Publishing Group (formerly OSA)",

number = "SUPPL.",

}

TY - JOUR

T1 - High ion current density plasma source for ion-assisted deposition of optical thin films

AU - Placido, Frank

AU - Gibson, Des

PY - 2010/4/30

Y1 - 2010/4/30

N2 - A plasma source utilizing direct current (DC) voltage between an anode and a hot hollow cathode is employed to create high-density plasma. Plasma spatial distribution, ion energy, plasma neutralisation, and current densities are found to be separately tunable. Ion current densities >0.5 mA/cm2 have been demonstrated over coating areas >1 m diameter. The primary advantage of plasma, as opposed to the ion source approach, is its ability to fill in the vacuum chamber and the couple with evaporant. This induces partial evaporant ionisation, providing uniform ion-assisted deposition over extended coating areas. Optical thin film properties deposited using the adapted high ion current plasma source are likewise described.

AB - A plasma source utilizing direct current (DC) voltage between an anode and a hot hollow cathode is employed to create high-density plasma. Plasma spatial distribution, ion energy, plasma neutralisation, and current densities are found to be separately tunable. Ion current densities >0.5 mA/cm2 have been demonstrated over coating areas >1 m diameter. The primary advantage of plasma, as opposed to the ion source approach, is its ability to fill in the vacuum chamber and the couple with evaporant. This induces partial evaporant ionisation, providing uniform ion-assisted deposition over extended coating areas. Optical thin film properties deposited using the adapted high ion current plasma source are likewise described.

U2 - 10.3788/COL201008S1.0049

DO - 10.3788/COL201008S1.0049

M3 - Article

AN - SCOPUS:77953246657

SN - 1671-7694

VL - 8

SP - 49

EP - 52

JO - Chinese Optics Letters

JF - Chinese Optics Letters

IS - SUPPL.

ER -

High ion current density plasma source for ion-assisted deposition of optical thin films

Abstract

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