Firm spin and parity assignments for high-lying, low-spin levels in stable Si isotopes

J. Sinclair, M. Scheck, S.W. Finch, Krishichayan, U. Friman-Gayer, W. Tornow, G. Battaglia, T. Beck, R. Chapman, M.M.R. Chishti, Ch. Fransen, R. Gonzales, E. Hoemann, J. Isaak, R.V.F. Janssens, D.A. Jaroszynski, S. Johnson, M.D. Jones, J.M. Keatings, N. KellyJ. Kleemann, D. Little, B. Loeher, K. Mashtakov, M. Muescher, D. O'Donnell, O. Papst, E.E. Peters, D. Savran, M. Schilling, R. Schwengner, P. Spagnoletti, M. Spieker, V. Werner, J. Wilhelmy, O. Wieland, S.W. Yates, A. Zilges

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Abstract

A natural silicon target was investigated in a natSi(γ, γ ) photon-scattering experiment with fully linearly-polarised, quasi-monochromatic γ rays in the entrance channel. The mean photon energies used were ⟨ E γ⟩ = 9.33, 9.77, 10.17, 10.55, 10.93, and 11.37 MeV, and the relative energy spread (full width at half maximum) of the incident beam was ΔE γ/ ⟨ E γ⟩ ≈ 3.5–4 %. The observed angular distributions for the ground-state decay allow firm spin and parity assignments for several levels of the stable even-even silicon isotopes.

Original languageEnglish
Article number105
Number of pages7
JournalEuropean Physical Journal A
Volume56
Issue number4
DOIs
Publication statusPublished - 6 Apr 2020

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