Fast response ZnO:Al/CuO nanowire/ZnO:Al heterostructure light sensors fabricated by dielectrophoresis

A. Garcia Marin, C. García Núñez, E. Ruiz, J. Piqueras, J.L. Pau

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Metal oxide nanowire (NW) photoconductors tend to exhibit high photoconductive gains and long recovery times mainly due to surface effects. In this work, p-type CuO NWs are synthesized by direct oxidation of copper and deposited on n-type ZnO:Al electrodes by dielectrophoresis. The heterostructure is electro-optically characterized showing recovery times in the 10 μs range, mainly limited by the resistance-capacitance product of the equivalent circuit, without signs of persistent effects. The fast response is attributed to short transit times across space charge regions built between CuO and ZnO:Al materials and fast carrier recombination at neutral regions.
Original languageEnglish
Article number232105
JournalApplied Physics Letters
Volume102
Issue number23
DOIs
Publication statusPublished - 12 Jun 2013
Externally publishedYes

Keywords

  • dielectrophoresis
  • metal oxide nanowires
  • nanowire assembly
  • nanowire synthesis

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