Fast response ZnO:Al/CuO nanowire/ZnO:Al heterostructure light sensors fabricated by dielectrophoresis

A. Garcia Marin; C. García Núñez; E. Ruiz; J. Piqueras; J.L. Pau

doi:10.1063/1.4811128

Fast response ZnO:Al/CuO nanowire/ZnO:Al heterostructure light sensors fabricated by dielectrophoresis

A. Garcia Marin, C. García Núñez, E. Ruiz, J. Piqueras, J.L. Pau

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Metal oxide nanowire (NW) photoconductors tend to exhibit high photoconductive gains and long recovery times mainly due to surface effects. In this work, p-type CuO NWs are synthesized by direct oxidation of copper and deposited on n-type ZnO:Al electrodes by dielectrophoresis. The heterostructure is electro-optically characterized showing recovery times in the 10 μs range, mainly limited by the resistance-capacitance product of the equivalent circuit, without signs of persistent effects. The fast response is attributed to short transit times across space charge regions built between CuO and ZnO:Al materials and fast carrier recombination at neutral regions.

Original language	English
Article number	232105
Journal	Applied Physics Letters
Volume	102
Issue number	23
DOIs	https://doi.org/10.1063/1.4811128
Publication status	Published - 12 Jun 2013
Externally published	Yes

Keywords

dielectrophoresis
metal oxide nanowires
nanowire assembly
nanowire synthesis

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10.1063/1.4811128

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@article{c848f094490d485392716390dd1a35b5,

title = "Fast response ZnO:Al/CuO nanowire/ZnO:Al heterostructure light sensors fabricated by dielectrophoresis",

abstract = "Metal oxide nanowire (NW) photoconductors tend to exhibit high photoconductive gains and long recovery times mainly due to surface effects. In this work, p-type CuO NWs are synthesized by direct oxidation of copper and deposited on n-type ZnO:Al electrodes by dielectrophoresis. The heterostructure is electro-optically characterized showing recovery times in the 10 μs range, mainly limited by the resistance-capacitance product of the equivalent circuit, without signs of persistent effects. The fast response is attributed to short transit times across space charge regions built between CuO and ZnO:Al materials and fast carrier recombination at neutral regions.",

keywords = "dielectrophoresis, metal oxide nanowires, nanowire assembly, nanowire synthesis",

author = "{Garcia Marin}, A. and {Garc{\'i}a N{\'u}{\~n}ez}, C. and E. Ruiz and J. Piqueras and J.L. Pau",

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year = "2013",

month = jun,

day = "12",

doi = "10.1063/1.4811128",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

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TY - JOUR

T1 - Fast response ZnO:Al/CuO nanowire/ZnO:Al heterostructure light sensors fabricated by dielectrophoresis

AU - Garcia Marin, A.

AU - García Núñez, C.

AU - Ruiz, E.

AU - Piqueras, J.

AU - Pau, J.L.

N1 - ORCID Reference type: [bibtex]; ORCID Reference: [@article{RID:0802150713883-3, title = {Fast response ZnO:Al/CuO nanowire/ZnO:Al heterostructure light sensors fabricated by dielectrophoresis}, journal = {Applied Physics Letters}, year = {2013}, author = {Garcia Marin, A. and Garcia Nunez, C. and Ruiz, E. and Piqueras, J. and Pau, J. L.}, volume = {102}, number = {23} }]

PY - 2013/6/12

Y1 - 2013/6/12

N2 - Metal oxide nanowire (NW) photoconductors tend to exhibit high photoconductive gains and long recovery times mainly due to surface effects. In this work, p-type CuO NWs are synthesized by direct oxidation of copper and deposited on n-type ZnO:Al electrodes by dielectrophoresis. The heterostructure is electro-optically characterized showing recovery times in the 10 μs range, mainly limited by the resistance-capacitance product of the equivalent circuit, without signs of persistent effects. The fast response is attributed to short transit times across space charge regions built between CuO and ZnO:Al materials and fast carrier recombination at neutral regions.

AB - Metal oxide nanowire (NW) photoconductors tend to exhibit high photoconductive gains and long recovery times mainly due to surface effects. In this work, p-type CuO NWs are synthesized by direct oxidation of copper and deposited on n-type ZnO:Al electrodes by dielectrophoresis. The heterostructure is electro-optically characterized showing recovery times in the 10 μs range, mainly limited by the resistance-capacitance product of the equivalent circuit, without signs of persistent effects. The fast response is attributed to short transit times across space charge regions built between CuO and ZnO:Al materials and fast carrier recombination at neutral regions.

KW - dielectrophoresis

KW - metal oxide nanowires

KW - nanowire assembly

KW - nanowire synthesis

U2 - 10.1063/1.4811128

DO - 10.1063/1.4811128

M3 - Article

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232105

ER -

Fast response ZnO:Al/CuO nanowire/ZnO:Al heterostructure light sensors fabricated by dielectrophoresis

Abstract

Keywords

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