Enhanced fabrication process of zinc oxide nanowires for optoelectronics

Carlos García Núñez; J.L. Pau; Eduardo Ruiz; Antonio Garcia Marin; B.J. Garcia; J. Piqueras; G. Shen; D.S. Wilbert; S.M. Kim; Patrick Kung

doi:10.1016/j.tsf.2013.12.011

Enhanced fabrication process of zinc oxide nanowires for optoelectronics

Carlos García Núñez, J.L. Pau, Eduardo Ruiz, Antonio Garcia Marin, B.J. Garcia, J. Piqueras, G. Shen, D.S. Wilbert, S.M. Kim, Patrick Kung

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Zinc oxide (ZnO) nanowires (NWs) based ultraviolet (UV) sensors have been fabricated using different assembly techniques to form functional structures, aiming at the improvement of the performance of NW-based sensors for optoelectronic applications. NWs with diameters and lengths varying between 90–870 nm and 2–20 μm, respectively, were synthesized by controlling the growth conditions in a chemical vapor transport system. Optical properties of NWs were studied by means of transmission spectroscopy. Electrical properties of single ZnO NW-based sensors were analyzed in dark and under UV illumination (at photon wavelength of λ < 370 nm) as a function of the NW diameter. Results of the study indicate that reduction of the NW diameter below 200 nm leads to an improvement of the photocurrent (at λ < 370 nm) up to 102 μA and a decrease of the decay time around 150 s. These enhancements may help to improve the performance of ZnO-based optoelectronic devices.

Original language	English
Pages (from-to)	42-47
Number of pages	6
Journal	Thin Solid Films
Volume	555
DOIs	https://doi.org/10.1016/j.tsf.2013.12.011
Publication status	Published - 31 Mar 2014
Externally published	Yes

Keywords

zinc oxide
nanowires
assembling methods
ultraviolet sensors
optoelectronics

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10.1016/j.tsf.2013.12.011

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@article{96957d7fa33c4d37954342cbcd2870f0,

title = "Enhanced fabrication process of zinc oxide nanowires for optoelectronics",

abstract = "Zinc oxide (ZnO) nanowires (NWs) based ultraviolet (UV) sensors have been fabricated using different assembly techniques to form functional structures, aiming at the improvement of the performance of NW-based sensors for optoelectronic applications. NWs with diameters and lengths varying between 90–870 nm and 2–20 μm, respectively, were synthesized by controlling the growth conditions in a chemical vapor transport system. Optical properties of NWs were studied by means of transmission spectroscopy. Electrical properties of single ZnO NW-based sensors were analyzed in dark and under UV illumination (at photon wavelength of λ < 370 nm) as a function of the NW diameter. Results of the study indicate that reduction of the NW diameter below 200 nm leads to an improvement of the photocurrent (at λ < 370 nm) up to 102 μA and a decrease of the decay time around 150 s. These enhancements may help to improve the performance of ZnO-based optoelectronic devices.",

keywords = "zinc oxide, nanowires, assembling methods, ultraviolet sensors, optoelectronics",

author = "{Garc{\'i}a N{\'u}{\~n}ez}, Carlos and J.L. Pau and Eduardo Ruiz and {Garcia Marin}, Antonio and B.J. Garcia and J. Piqueras and G. Shen and D.S. Wilbert and S.M. Kim and Patrick Kung",

note = "ORCID Reference type: [bibtex]; ORCID Reference: [@article{RID:0802150713882-6, title = {Enhanced fabrication process of zinc oxide nanowires for optoelectronics}, journal = {Thin Solid Films}, year = {2014}, author = {Garcia Nunez, C. and Pau, J. L. and Ruiz, E. and Garcia Marin, A. and Garcia, B. J. and Piqueras, J. and Shen, G. and Wilbert, D. S. and Kim, S. M. and Kung, P.}, volume = {555}, pages = {42-47} }]",

year = "2014",

month = mar,

day = "31",

doi = "10.1016/j.tsf.2013.12.011",

language = "English",

volume = "555",

pages = "42--47",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Enhanced fabrication process of zinc oxide nanowires for optoelectronics

AU - García Núñez, Carlos

AU - Pau, J.L.

AU - Ruiz, Eduardo

AU - Garcia Marin, Antonio

AU - Garcia, B.J.

AU - Piqueras, J.

AU - Shen, G.

AU - Wilbert, D.S.

AU - Kim, S.M.

AU - Kung, Patrick

N1 - ORCID Reference type: [bibtex]; ORCID Reference: [@article{RID:0802150713882-6, title = {Enhanced fabrication process of zinc oxide nanowires for optoelectronics}, journal = {Thin Solid Films}, year = {2014}, author = {Garcia Nunez, C. and Pau, J. L. and Ruiz, E. and Garcia Marin, A. and Garcia, B. J. and Piqueras, J. and Shen, G. and Wilbert, D. S. and Kim, S. M. and Kung, P.}, volume = {555}, pages = {42-47} }]

PY - 2014/3/31

Y1 - 2014/3/31

N2 - Zinc oxide (ZnO) nanowires (NWs) based ultraviolet (UV) sensors have been fabricated using different assembly techniques to form functional structures, aiming at the improvement of the performance of NW-based sensors for optoelectronic applications. NWs with diameters and lengths varying between 90–870 nm and 2–20 μm, respectively, were synthesized by controlling the growth conditions in a chemical vapor transport system. Optical properties of NWs were studied by means of transmission spectroscopy. Electrical properties of single ZnO NW-based sensors were analyzed in dark and under UV illumination (at photon wavelength of λ < 370 nm) as a function of the NW diameter. Results of the study indicate that reduction of the NW diameter below 200 nm leads to an improvement of the photocurrent (at λ < 370 nm) up to 102 μA and a decrease of the decay time around 150 s. These enhancements may help to improve the performance of ZnO-based optoelectronic devices.

AB - Zinc oxide (ZnO) nanowires (NWs) based ultraviolet (UV) sensors have been fabricated using different assembly techniques to form functional structures, aiming at the improvement of the performance of NW-based sensors for optoelectronic applications. NWs with diameters and lengths varying between 90–870 nm and 2–20 μm, respectively, were synthesized by controlling the growth conditions in a chemical vapor transport system. Optical properties of NWs were studied by means of transmission spectroscopy. Electrical properties of single ZnO NW-based sensors were analyzed in dark and under UV illumination (at photon wavelength of λ < 370 nm) as a function of the NW diameter. Results of the study indicate that reduction of the NW diameter below 200 nm leads to an improvement of the photocurrent (at λ < 370 nm) up to 102 μA and a decrease of the decay time around 150 s. These enhancements may help to improve the performance of ZnO-based optoelectronic devices.

KW - zinc oxide

KW - nanowires

KW - assembling methods

KW - ultraviolet sensors

KW - optoelectronics

U2 - 10.1016/j.tsf.2013.12.011

DO - 10.1016/j.tsf.2013.12.011

M3 - Article

SN - 0040-6090

VL - 555

SP - 42

EP - 47

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Enhanced fabrication process of zinc oxide nanowires for optoelectronics

Abstract

Keywords

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