Effects of sputtering pressure on properties of copper oxide thin films prepared by rf magnetron sputtering

T. H. Darma, A. A. Ogwu, F. Placido

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Abstract

Copper oxide thin films produced by rf magnetron sputtering on glass substrates have been characterised by XRD, SEM, AFM, spectrophotometer and four-point probe measurements. It is shown that process parameters can be varied to produce films of varying compositions, and optical and electrical properties. Depositions at 200 W power and an oxygen flowrate of 2 sccm in particular are found to favour the formation of single phase cuprous oxide. The optical and electrical properties of the films prepared under the stated conditions are of potential interest for application in semiconducting materials.
Original languageEnglish
Pages (from-to)28-31
JournalMaterials Technology
Volume26
Issue number1
DOIs
Publication statusPublished - Feb 2011

Keywords

  • Copper oxide
  • thin films
  • rf magnetron sputtering
  • sputtering pressure

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