Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)

Li-Jian Meng; Jinsong Gao; R. A. Silva; Shigeng Song

doi:10.1016/j.tsf.2007.07.071

Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)

Li-Jian Meng, Jinsong Gao, R. A. Silva, Shigeng Song

School of Computing, Engineering and Physical Sciences

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10− 2 Pa at this oxygen flow).

Original language	English
Pages (from-to)	5454-5459
Number of pages	6
Journal	Thin Solid Films
Volume	516
Issue number	16
DOIs	https://doi.org/10.1016/j.tsf.2007.07.071
Publication status	Published - 30 Jun 2008

Keywords

ITO
thin Film
ion beam assisted deposition
IR reflectance
optical and electrical properties

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10.1016/j.tsf.2007.07.071

Cite this

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title = "Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)",

abstract = "ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10− 2 Pa at this oxygen flow).",

keywords = "ITO, thin Film, ion beam assisted deposition, IR reflectance, optical and electrical properties",

author = "Li-Jian Meng and Jinsong Gao and Silva, {R. A.} and Shigeng Song",

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doi = "10.1016/j.tsf.2007.07.071",

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TY - JOUR

T1 - Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)

AU - Meng, Li-Jian

AU - Gao, Jinsong

AU - Silva, R. A.

AU - Song, Shigeng

PY - 2008/6/30

Y1 - 2008/6/30

N2 - ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10− 2 Pa at this oxygen flow).

AB - ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10− 2 Pa at this oxygen flow).

KW - ITO

KW - thin Film

KW - ion beam assisted deposition

KW - IR reflectance

KW - optical and electrical properties

U2 - 10.1016/j.tsf.2007.07.071

DO - 10.1016/j.tsf.2007.07.071

M3 - Article

SN - 0040-6090

VL - 516

SP - 5454

EP - 5459

JO - Thin Solid Films

JF - Thin Solid Films

IS - 16

ER -

Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)

Abstract

Keywords

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