Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)

Li-Jian Meng, Jinsong Gao, R. A. Silva, Shigeng Song

Research output: Contribution to journalArticle

Abstract

ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10− 2 Pa at this oxygen flow).
Original languageEnglish
Pages (from-to)5454-5459
Number of pages6
JournalThin Solid Films
Volume516
Issue number16
DOIs
Publication statusPublished - 30 Jun 2008

Keywords

  • ITO
  • thin Film
  • ion beam assisted deposition
  • IR reflectance
  • optical and electrical properties

Cite this

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title = "Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)",
abstract = "ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10− 2 Pa at this oxygen flow).",
keywords = "ITO, thin Film, ion beam assisted deposition, IR reflectance, optical and electrical properties",
author = "Li-Jian Meng and Jinsong Gao and Silva, {R. A.} and Shigeng Song",
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language = "English",
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pages = "5454--5459",
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issn = "0040-6090",
publisher = "Elsevier B.V.",
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Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD). / Meng, Li-Jian; Gao, Jinsong; Silva, R. A.; Song, Shigeng.

In: Thin Solid Films, Vol. 516, No. 16, 30.06.2008, p. 5454-5459.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)

AU - Meng, Li-Jian

AU - Gao, Jinsong

AU - Silva, R. A.

AU - Song, Shigeng

PY - 2008/6/30

Y1 - 2008/6/30

N2 - ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10− 2 Pa at this oxygen flow).

AB - ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10− 2 Pa at this oxygen flow).

KW - ITO

KW - thin Film

KW - ion beam assisted deposition

KW - IR reflectance

KW - optical and electrical properties

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DO - 10.1016/j.tsf.2007.07.071

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