Effect of the deposition temperature on the properties of Zn3N2 layers grown by rf magnetron sputtering

C. García Núñez, J.L. Pau, M.J. Hernandez, M. Cervera, J. Piqueras

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, polycrystalline zinc nitride films were prepared on Si and glass substrates by rf magnetron sputtering in N2 ambient using Zn as a target. Substrate temperature (Ts) was different for each deposition process ranging from 298 K to 523 K. Optical transmission experiments showed that the optical band gap of the resultant layers decreased as Ts increased. X-ray diffraction scans presented a pattern of oriented crystals along the (100) direction at low Ts in contrast to the highly disoriented patterns obtained at high Ts. Hall measurements were carried out and exhibited n-type character for all samples, with mobilities ranging between 10 and 30 cm2/Vs, and a resistivity reduction as substrate temperature increases. By scanning electron microscopy, it was possible to study the grain structure forming the surface of zinc nitride. The size of the grains became larger as Ts increased, which accounts for the reduction of the electrical resistivity.
Original languageEnglish
Title of host publicationProceedings of the 8th Spanish Conference on Electron Devices
Subtitle of host publicationCDE'2011
PublisherIEEE
Number of pages4
ISBN (Electronic)978-1-4244-7865-1
ISBN (Print)978-1-4244-7863-7
DOIs
Publication statusPublished - 7 Apr 2011
Externally publishedYes

Publication series

NameIEEE Conference Series
ISSN (Print)2163-4971

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Keywords

  • component
  • zinc nitride
  • rf magnetron sputtering
  • Hall effect
  • optical transmission
  • x-ray diffraction
  • scanning electron microscopy

Cite this

Núñez, C. G., Pau, J. L., Hernandez, M. J., Cervera, M., & Piqueras, J. (2011). Effect of the deposition temperature on the properties of Zn3N2 layers grown by rf magnetron sputtering. In Proceedings of the 8th Spanish Conference on Electron Devices: CDE'2011 [5744203] (IEEE Conference Series). IEEE. https://doi.org/10.1109/SCED.2011.5744203