Development of sputtered AlN thin-film ultrasonic transducers for durable high-temperature applications

R. Hou, D. Hutson, K.J. Kirk

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

This paper presents some of the recent experimental work on developing AIN ultrasonic transducers for high-temperature NDT applications. C-axis oriented AlN films were grown on stainless steel SS316 substrate by RF sputtering deposition. The high-temperature performance and durability of the transducer were examined by pulse-echo experiments after heating to different temperatures. It can be shown that the sputtered AlN film transducer is capable of highly stable and durable performance at 400°C or above, with appropriate choice of substrate, buffer layer, electroding materials and electroding approaches. Experimental evidence also indicates that transducers made of sputtered AlN film and a molybdenum buffer layer on a stainless steel substrate could potentially operate at up to 800°C.
Original languageEnglish
Pages (from-to)302-307
Number of pages6
JournalInsight - Non-destructive Testing and Condition Monitoring
Volume55
Issue number6
DOIs
Publication statusPublished - Jun 2013

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