Crystal size induced reduction in thermal hysteresis of Ni-Ti-Nb shape memory thin films

K. Li; Y. Li; K. Y. Yu; C. Liu; D. Gibson; A. Leyland; A. Matthews; Y. Q. Fu

doi:10.1063/1.4948377

Crystal size induced reduction in thermal hysteresis of Ni-Ti-Nb shape memory thin films

K. Li, Y. Li, K. Y. Yu, C. Liu, D. Gibson, A. Leyland, A. Matthews, Y. Q. Fu

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

154 Downloads (Pure)

Abstract

Ni_41.7Ti_38.8Nb_19.5 shape memory alloy films were sputter-deposited onto silicon substrates and annealed at various temperatures. A narrow thermal hysteresis was obtained in the Ni-Ti-Nb films with a grain size of less than 50 nm. The small grain size, which means an increase in the volume fraction of grain boundaries, facilitates the phase transformation and reduces the hysteresis. The corresponding less transformation friction and lower heat transfer during the shear process, as well as reduced spontaneous lattice distortion, are responsible for this reduction of the thermal hysteresis.

Original language	English
Article number	171907
Number of pages	3
Journal	Applied Physics Letters
Volume	108
Issue number	17
Early online date	25 Apr 2016
DOIs	https://doi.org/10.1063/1.4948377
Publication status	E-pub ahead of print - 25 Apr 2016

Keywords

phase transitions
crystallographic defects
electrical resistivity
magnetic hysteresis
smart materials
thermal effects
thin films
transmission electron microscopy
x-ray diffraction
chemical elements

Access to Document

10.1063/1.4948377

2016 04 01 Li et al Crystal finalFinal published version, 900 KBLicence: CC BY-NC-ND

http://nrl.northumbria.ac.uk/26579/

Cite this

@article{e2d2c256e93c41c299d8e4ca5b03e71f,

title = "Crystal size induced reduction in thermal hysteresis of Ni-Ti-Nb shape memory thin films",

abstract = "Ni41.7Ti38.8Nb19.5 shape memory alloy films were sputter-deposited onto silicon substrates and annealed at various temperatures. A narrow thermal hysteresis was obtained in the Ni-Ti-Nb films with a grain size of less than 50 nm. The small grain size, which means an increase in the volume fraction of grain boundaries, facilitates the phase transformation and reduces the hysteresis. The corresponding less transformation friction and lower heat transfer during the shear process, as well as reduced spontaneous lattice distortion, are responsible for this reduction of the thermal hysteresis.",

keywords = "phase transitions, crystallographic defects, electrical resistivity, magnetic hysteresis, smart materials, thermal effects, thin films, transmission electron microscopy, x-ray diffraction, chemical elements",

author = "K. Li and Y. Li and Yu, {K. Y.} and C. Liu and D. Gibson and A. Leyland and A. Matthews and Fu, {Y. Q.}",

year = "2016",

month = apr,

day = "25",

doi = "10.1063/1.4948377",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Crystal size induced reduction in thermal hysteresis of Ni-Ti-Nb shape memory thin films

AU - Li, K.

AU - Li, Y.

AU - Yu, K. Y.

AU - Liu, C.

AU - Gibson, D.

AU - Leyland, A.

AU - Matthews, A.

AU - Fu, Y. Q.

PY - 2016/4/25

Y1 - 2016/4/25

N2 - Ni41.7Ti38.8Nb19.5 shape memory alloy films were sputter-deposited onto silicon substrates and annealed at various temperatures. A narrow thermal hysteresis was obtained in the Ni-Ti-Nb films with a grain size of less than 50 nm. The small grain size, which means an increase in the volume fraction of grain boundaries, facilitates the phase transformation and reduces the hysteresis. The corresponding less transformation friction and lower heat transfer during the shear process, as well as reduced spontaneous lattice distortion, are responsible for this reduction of the thermal hysteresis.

AB - Ni41.7Ti38.8Nb19.5 shape memory alloy films were sputter-deposited onto silicon substrates and annealed at various temperatures. A narrow thermal hysteresis was obtained in the Ni-Ti-Nb films with a grain size of less than 50 nm. The small grain size, which means an increase in the volume fraction of grain boundaries, facilitates the phase transformation and reduces the hysteresis. The corresponding less transformation friction and lower heat transfer during the shear process, as well as reduced spontaneous lattice distortion, are responsible for this reduction of the thermal hysteresis.

KW - phase transitions

KW - crystallographic defects

KW - electrical resistivity

KW - magnetic hysteresis

KW - smart materials

KW - thermal effects

KW - thin films

KW - transmission electron microscopy

KW - x-ray diffraction

KW - chemical elements

U2 - 10.1063/1.4948377

DO - 10.1063/1.4948377

M3 - Article

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171907

ER -

Crystal size induced reduction in thermal hysteresis of Ni-Ti-Nb shape memory thin films

Abstract

Keywords

Access to Document

Fingerprint

Cite this