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Electronic Devices
100%
Device-independent
100%
Zinc Oxide Nanorods
100%
GaAs Nanowires
100%
Zinc Nitride
100%
Thin Oxides
100%
Nanowires
83%
Substrate Temperature
33%
Advanced Materials
22%
Nanowire Surfaces
22%
Ga Droplet
22%
Thin-film Transistors
22%
Zinc Oxide
16%
Scanning Electron Microscopy Analysis
16%
Nanowire Growth
16%
UV Photodetector
16%
Phototransistor
16%
Visible-light Photodetector
16%
Surface Oxidation
11%
Projects Funded
11%
Transmission Electron Microscopy
11%
Surface Layer
11%
Gallium Arsenide
11%
Droplet Formation
11%
Electrical Characterization
11%
Oxides
11%
Grain Size
11%
Grain Boundary
11%
Visible Light
11%
Oxide Surfaces
11%
Traditional Materials
11%
Vertically Aligned
11%
Chemical Beam Epitaxy
11%
Reflection High-energy Electron Diffraction
11%
Si(111) Substrate
11%
Electrical Characteristics
11%
Conductive Electrode
11%
Photodetector
11%
Carrier Concentration
11%
Rutherford Backscattering Spectrometry
11%
O Adsorption
11%
High Performance
5%
High Sensitivity
5%
Spectroscopic Ellipsometry
5%
Bulk Material
5%
Costing Methods
5%
Madrid
5%
In Situ
5%
Oxidation Mechanism
5%
Rise Time
5%
Aspect Ratio
5%
X Ray Diffraction
5%
X-ray Scanning
5%
Electrical Conductivity
5%
Existing Technology
5%
Hydroxylation
5%
Substrate Surface
5%
Optical Characterization
5%
Thin Film Materials
5%
Technology-based
5%
Growth Conditions
5%
Incubation Time
5%
Photoresponse
5%
Optical Transmission
5%
Surface Treatment
5%
High Growth Rate
5%
Surface Properties
5%
Active Structure
5%
Temperature Decrease
5%
Transmission Measurement
5%
Si Surface
5%
Pattern Characteristic
5%
Oxide Thickness
5%
Crystal Quality
5%
High-crystalline
5%
Capping Layer
5%
Radio Frequency Magnetron Sputtering
5%
Short Decay Time
5%
Trapping Effects
5%
Blue Shift
5%
Transient Photoresponse
5%
Surface Traps
5%
Dark Current
5%
Property Characteristics
5%
Silanization
5%
Nanowire Diameter
5%
Chemical Vapor Transport
5%
Space Charge Region
5%
Photoconductive Gain
5%
Threshold Voltage
5%
Absorption Edge
5%
Channel Layer
5%
Transistor Characteristics
5%
Nanowire Length
5%
Low Dimensionality
5%
Metal-organic Complex
5%
Pinhole
5%
V(III)
5%
Thick Oxide
5%
Vacuum Condition
5%
Hall Mobility
5%
Resistivity
5%
Oxidation Rate
5%
Submicron
5%
Adsorption-desorption Mechanism
5%
Annealing Process
5%
Pure Zinc
5%
Electron Transmission
5%
UV Spectral Range
5%
Mobility Values
5%
Single Nanowire
5%
High Absorption
5%
Vapor-liquid-solid Mechanism
5%
Special Mechanism
5%
Electric Arc
5%
Droplet Size
5%
Nanowire Integration
5%
Electric Mobility
5%
Gain Value
5%
Photogenerated Holes
5%
Channel Expansion
5%
Ar Plasma
5%
N-channel
5%
Alternating Electric Field
5%
Horizontal Bar
5%
Novel Procedure
5%
Competitividad
5%
Vapor-liquid-solid Process
5%
Zinc-blende Structure
5%
Electrical Transport
5%
Dark Ambient Conditions
5%
Free Charge
5%
Photoresponsivity
5%
Semiconductor Technology
5%
Thermal Cracking
5%
Comunidad
5%
Ionized Impurity Scattering
5%
Rapid Transformation
5%
Si(111)
5%
Electric Current
5%
Electrical Conduction
5%
Trapped Electrons
5%
Preferential Orientation
5%
Semiconductor Behavior
5%
Direct Bandgap Semiconductor
5%
Crystalline Substrate
5%
Enhancement-mode (E-mode)
5%
Nanocontact
5%
Seed Layer
5%
Metastability
5%
Material Science
Thin Films
100%
Zinc Oxide
100%
Nanowire
100%
Gallium Arsenide
100%
Surface (Surface Science)
24%
Oxidation Reaction
9%
Oxide Compound
9%
Advanced Material
9%
Thin-Film Transistor
9%
Transistor
9%
Scanning Electron Microscopy
7%
Electron Microscopy
7%
Transmission Electron Microscopy
4%
Grain Size
4%
Oxide Surface
4%
Carrier Concentration
4%
Chemical Beam Epitaxy
4%
Reflection High-Energy Electron Diffraction
4%
Electrical Property
4%
Rutherford Backscattering Spectrometry
4%
Grain Boundary
4%
X-Ray Diffraction
2%
Surface Property
2%
Magnetron Sputtering
2%
Nucleation
2%
Desorption
2%
Electrical Resistivity
2%
Nitride Compound
2%
Pure Zinc
2%
Hall Mobility
2%
Electrical Characterization of Thin Film
2%
Metastability
2%
Phase Composition
2%
Surface Treatment
2%
Engineering
Thin Films
100%
Gallium Arsenide
100%
Nanowire
100%
Substrate Temperature
15%
Photometer
15%
Conductive
10%
Thin-Film Transistor
10%
Phototransistor
7%
Image Analysis
5%
Polycrystalline
5%
Energy Electron Diffraction
5%
Carrier Concentration
5%
Surface Layers
5%
Flat Surface
5%
Realization
2%
Dimensionality
2%
Transients
2%
Radio Frequency
2%
Ray Diffraction
2%
Microscale
2%
Substrate Surface
2%
Nitride
2%
Film Material
2%
Bulk Material
2%
Magnetron
2%
Performed Measurement
2%
Ultraviolet Light
2%
Optical Transmission
2%
Si Surface
2%
Ambient Condition
2%
Oxide Thickness
2%
Growth Condition
2%
High Aspect Ratio
2%
Capping Layer
2%
Crystalline Quality
2%
Oxidized Si
2%
Decay Time
2%
Rise Time
2%
Blueshift
2%
Hydroxylation
2%
Silanization
2%
Space Charge Region
2%
Nanowire Diameter
2%
Applied Electric Field
2%
Electrical Mobility
2%
Spectral Range
2%
Seed Layer
2%
Absorption Edge
2%
Thermal Cracking
2%
Droplet Size
2%
Sufficient Time
2%
Solid Process
2%
Gap Semiconductor
2%
Led Surface
2%
Channel Layer
2%
Ar Plasma
2%
Oxidation Rate
2%
Annealing Process
2%
High Growth Rate
2%
Phase Composition
2%
Band Gap
2%
Electrical Conductivity
2%
Metastable State
2%
Electric Arc
2%