CMOS On-Chip Stable True-Random ID Generation Using Antenna Effect

Fang Tang, Denis G. Chen, Bo Wang, Amine Bermak, Abbes Amira, Saqib Mohamad

Research output: Contribution to journalArticle

Abstract

A CMOS on-chip ID generation scheme is proposed. Using the antenna effect during the chip fabrication, one gate in a transistor pair is physically randomly broken down due to the process variation and an on-chip ID number is thus created depending on its polarity. The generated ID not only is permanently immune from environment changes such as supply voltage and temperature, but also consumes ultra-low leakage power without any dynamic transitions. The functionality of the proposed ID generation scheme has been experimentally verified by a fabricated chip in 0.18 mu m CMOS process.
Original languageEnglish
Pages (from-to)54-56
JournalIEEE Electron Device Letters
Volume35
Issue number1
DOIs
Publication statusPublished - Jan 2014

Keywords

  • CMOS on-chip ID
  • antenna effect
  • true random

Cite this

Tang, F., Chen, D. G., Wang, B., Bermak, A., Amira, A., & Mohamad, S. (2014). CMOS On-Chip Stable True-Random ID Generation Using Antenna Effect. IEEE Electron Device Letters, 35(1), 54-56. https://doi.org/10.1109/LED.2013.2287514
Tang, Fang ; Chen, Denis G. ; Wang, Bo ; Bermak, Amine ; Amira, Abbes ; Mohamad, Saqib. / CMOS On-Chip Stable True-Random ID Generation Using Antenna Effect. In: IEEE Electron Device Letters. 2014 ; Vol. 35, No. 1. pp. 54-56.
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Tang, F, Chen, DG, Wang, B, Bermak, A, Amira, A & Mohamad, S 2014, 'CMOS On-Chip Stable True-Random ID Generation Using Antenna Effect' IEEE Electron Device Letters, vol. 35, no. 1, pp. 54-56. https://doi.org/10.1109/LED.2013.2287514

CMOS On-Chip Stable True-Random ID Generation Using Antenna Effect. / Tang, Fang; Chen, Denis G.; Wang, Bo; Bermak, Amine; Amira, Abbes; Mohamad, Saqib.

In: IEEE Electron Device Letters, Vol. 35, No. 1, 01.2014, p. 54-56.

Research output: Contribution to journalArticle

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