Band gap engineering of Pb1-x CdxSe thin films providing mid-IR photoluminescent based light emitting diodes for use in non-dispersive infrared gas sensors

Greg McGann; Carlos Garcia Nuñez; Lewis Fleming; David Hutson; Ewan Waddell; Des Gibson

doi:10.1109/LSENS.2023.3307081

Band gap engineering of Pb_1-xCd_xSe thin films providing mid-IR photoluminescent based light emitting diodes for use in non-dispersive infrared gas sensors

Greg McGann
, Carlos Garcia Nuñez
, Lewis Fleming
, David Hutson
, Ewan Waddell
, Des Gibson

Research output: Contribution to journal › Article › peer-review

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Abstract

This work describes band-gap engineering of PbCdSe thin films for their use as light emitters in methane gas sensors. Pb _0.9 Cd _0.1 Se thin films were synthesized by pulsed direct current (DC) magnetron sputtering. Optical characterization of films demonstrated successful emission of light at 3.32 μm. Postsensitization (PS)—in highly reactive oxygen and iodine environment—was also analyzed. Design of experiments was used to optimize photoluminescence (PL) of PbCdSe films as a function of PS conditions. The studies demonstrated a high influence of PS temperature on PL properties. The thickness of the films was also demonstrated to have a significant effect on the enhancement of PL. The analysis of the morphology revealed that recrystallization of the material was key for the emission of light, probing its applicability as mid-IR light source in nondispersive IR gas sensors.

Original language	English
Article number	2001704
Number of pages	4
Journal	IEEE Sensors Letters
Volume	7
Issue number	9
DOIs	https://doi.org/10.1109/LSENS.2023.3307081
Publication status	Published - 21 Aug 2023

Keywords

sensor materials
gas sensors
mid-IR light source
PbCdSe
sputtering

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10.1109/LSENS.2023.3307081

2023 08 12 McGann et al Band accepted - for PureAccepted author manuscript, 1.2 MB

https://eprints.gla.ac.uk/305229/

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title = "Band gap engineering of Pb1-x CdxSe thin films providing mid-IR photoluminescent based light emitting diodes for use in non-dispersive infrared gas sensors",

abstract = "This work describes band-gap engineering of PbCdSe thin films for their use as light emitters in methane gas sensors. Pb 0.9 Cd 0.1 Se thin films were synthesized by pulsed direct current (DC) magnetron sputtering. Optical characterization of films demonstrated successful emission of light at 3.32 μm. Postsensitization (PS)—in highly reactive oxygen and iodine environment—was also analyzed. Design of experiments was used to optimize photoluminescence (PL) of PbCdSe films as a function of PS conditions. The studies demonstrated a high influence of PS temperature on PL properties. The thickness of the films was also demonstrated to have a significant effect on the enhancement of PL. The analysis of the morphology revealed that recrystallization of the material was key for the emission of light, probing its applicability as mid-IR light source in nondispersive IR gas sensors.",

keywords = "sensor materials, gas sensors, mid-IR light source, PbCdSe, sputtering",

author = "Greg McGann and Nu{\~n}ez, \{Carlos Garcia\} and Lewis Fleming and David Hutson and Ewan Waddell and Des Gibson",

year = "2023",

month = aug,

day = "21",

doi = "10.1109/LSENS.2023.3307081",

language = "English",

volume = "7",

journal = "IEEE Sensors Letters",

issn = "2475-1472",

publisher = "IEEE",

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TY - JOUR

T1 - Band gap engineering of Pb1-x CdxSe thin films providing mid-IR photoluminescent based light emitting diodes for use in non-dispersive infrared gas sensors

AU - McGann, Greg

AU - Nuñez, Carlos Garcia

AU - Fleming, Lewis

AU - Hutson, David

AU - Waddell, Ewan

AU - Gibson, Des

PY - 2023/8/21

Y1 - 2023/8/21

N2 - This work describes band-gap engineering of PbCdSe thin films for their use as light emitters in methane gas sensors. Pb 0.9 Cd 0.1 Se thin films were synthesized by pulsed direct current (DC) magnetron sputtering. Optical characterization of films demonstrated successful emission of light at 3.32 μm. Postsensitization (PS)—in highly reactive oxygen and iodine environment—was also analyzed. Design of experiments was used to optimize photoluminescence (PL) of PbCdSe films as a function of PS conditions. The studies demonstrated a high influence of PS temperature on PL properties. The thickness of the films was also demonstrated to have a significant effect on the enhancement of PL. The analysis of the morphology revealed that recrystallization of the material was key for the emission of light, probing its applicability as mid-IR light source in nondispersive IR gas sensors.

AB - This work describes band-gap engineering of PbCdSe thin films for their use as light emitters in methane gas sensors. Pb 0.9 Cd 0.1 Se thin films were synthesized by pulsed direct current (DC) magnetron sputtering. Optical characterization of films demonstrated successful emission of light at 3.32 μm. Postsensitization (PS)—in highly reactive oxygen and iodine environment—was also analyzed. Design of experiments was used to optimize photoluminescence (PL) of PbCdSe films as a function of PS conditions. The studies demonstrated a high influence of PS temperature on PL properties. The thickness of the films was also demonstrated to have a significant effect on the enhancement of PL. The analysis of the morphology revealed that recrystallization of the material was key for the emission of light, probing its applicability as mid-IR light source in nondispersive IR gas sensors.

KW - sensor materials

KW - gas sensors

KW - mid-IR light source

KW - PbCdSe

KW - sputtering

U2 - 10.1109/LSENS.2023.3307081

DO - 10.1109/LSENS.2023.3307081

M3 - Article

SN - 2475-1472

VL - 7

JO - IEEE Sensors Letters

JF - IEEE Sensors Letters

IS - 9

M1 - 2001704

ER -

Band gap engineering of Pb1-x CdxSe thin films providing mid-IR photoluminescent based light emitting diodes for use in non-dispersive infrared gas sensors

Abstract

Keywords

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Band gap engineering of Pb_1-xCd_xSe thin films providing mid-IR photoluminescent based light emitting diodes for use in non-dispersive infrared gas sensors