Abstract
In this study, boron carbide thin films were deposited by microwave plasma-assisted pulsed DC sputtering system with hydrogen as reactive gas at different hydrogen flow rates. The design thickness of boron carbide thin film was 1200 nm, and the design thickness of transition layer amorphous Si was 500 nm. The substrates used were microslides, Ge, Si, Si wafer, GaAs and JGS3. Then, Fourier infrared spectroscopy (FT-IR), X-ray diffraction (XRD) and Vicker indenter were used to analyze the effects of hydrogen flow (0, 3, 7 and 10 mL/min) on the optical and mechanical properties of boron carbide thin films. As the results, the infrared optical transmittance and absorption rate could be improved by increasing the flow rate of hydrogen. At the same time, the increase of hydrogen could also reduce the stress of the coating, making it easy to adhere to the substrate. However, hydrogen reduced the hardness of boron carbide thin films.
Translated title of the contribution | Infrared optical and mechanical properties of boron carbide thin films deposited by hydrogen-assisted pulsed DC sputtering |
---|---|
Original language | Chinese |
Pages (from-to) | 7039-7044 |
Number of pages | 6 |
Journal | Journal of Functional Materials |
Volume | 51 |
Issue number | 7 |
Publication status | Published - 30 Jul 2020 |
Keywords
- boron carbide thin films
- infrared optical properties
- mechanical properties